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1004 IP
901
0.0
64x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm SiGe BiCMOS 1.8V/3.3V General Purpose Process
The ATO00064X1TS180SGE3NA is organized as a 64-bit by 1 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 0.18μm S...
902
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm 1.8V/3.3V Logic Process
The ATO00064X8CA180TGO3NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ca-Sem- 0.18μ...
903
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ca-Sem- 0.18μm pure 3.3V MS process
The ATO00064X8CA180M333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in CanSemi 0.18...
904
0.0
64x8 Bits OTP (One-Time Programmable) IP, Ne-chi- 0.15μm 3.3V Logic Processes
The ATO00064X8NX150FPS3NA is organized as a 64x8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in Ne-chi- 0.15μm 3.3V ...
905
0.0
64x8 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm MSGL-GE-1.8-3.3 & MSGL-LC-3.3-3.3
The ATO00064X8SM180N333NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in SMIC 0.18μm ...
906
0.0
64x8 Bits OTP (One-Time Programmable) IP, TSM- 130nm BCD Plus Process
The ATO00064X8TS130BP53NA is organized as a 64-bit by 8 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSMC 0.13μm ...
907
0.0
256x1 Bits OTP (One-Time Programmable) IP, Abli- 130 nm 130nm BCD with 5V CMOS Core Process
The ATO00256X1AB130MXX3XX00A is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.13µm s...
908
0.0
256x1 Bits OTP (One-Time Programmable) IP, TSM- 0.18μm 1.8V/3.3V Mixed-Signal, General Purpose Process
The ATO00256X1TS180MSG3NA is organized as a 256 bit by 1 one-time programmable (OTP).This is a kind of non-volatile memory fabricated in TSM- 0.18μm 1...
909
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AC is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in UM- 110 nm 1.2V/...
910
0.0
256x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE Process
The AT256X1U110MAE0AB is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
911
0.0
256x1 Bits OTP (One-Time Programmable) IP, VI- 110 nm 1.2V/5.0V BCD Process
The AT256X1V110BCD0AA is organized as 256 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memory...
912
0.0
256x16 Bits OTP (One-Time Programmable) IP, 256x16 Bits One Time Programmable Device SMI- 110nm 1.2V/3.3V Mixed Signal Generic Process
The AT256X16Z110LL0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
913
0.0
256x16 Bits OTP (One-Time Programmable) IP, TSM- 152nm 1.8V/3.3V GP MS Process
The AT256X16T152LP0AA is organized as 256 bits by 16 one-time programmable in 16-bit read and 1-bit program modes. This is a kind of non-volatile memo...
914
0.0
256X8 Bits OTP (One-Time Programmable) IP, SMI- 0.153μm MSGL-GE-1.8-3.3 Process
The ATO00256X1SM153MSG2NA is organized as a 256-bit by 1 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in SMIC 0.153u...
915
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 0.13um 1.5V/3.3V LP Process
The AT256X8T130LP0AA is organized as a 256-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 0.13um 1.5V/...
916
0.0
256x8 Bits OTP (One-Time Programmable) IP, TSM- 40G 0.9/1.8V Process
The AT256X8T40G6AA is organized as 256 bits by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in TSM- 40nm G standard...
917
0.0
4608x12 Bits OTP (One-Time Programmable) IP, TSM- 40ULP 0.9V/2.5V Process
The ATO4608X12TS040ULP7ZA is organized as 4608 x 12 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 40nm ULP sta...
918
0.0
768 x 1 Bits One Time Programmable Device D- Hite- Mixed-Signal 110 nm 1.2V/3.3V Process
The ATO00768X1DB110SBM2NA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile m...
919
0.0
768x1 Bits OTP (One-Time Programmable) IP, UM- 110 nm 1.2V/3.3V L110AE
The AT768X1U110MAE0AA is organized as 768 bits by 1 one-time programmable in 1-bit read and 1-bit program modes. This is a kind of non-volatile memor...
920
0.0
768x3 Bits OTP (One-Time Programmable) IP, UM- 142 nm 1.8V/3.3V CIS
The AT768X3U142CIS0AA is organized as 768-bits by 3 one-time programmable in parallel mode. This is a kind of non-volatile memory fabricated in 0.142...
921
0.0
768x39 Bits OTP (One-Time Programmable) IP, TSM- 55ULP 0.9V–1.2V / 2.5V Process
The ATO0768X39TS055ULP4NL is organized as 768x39 one-time programmable (OTP). This is a type of non-volatile memory fabricated in TSM- 55nm LP 1.2V/2....
922
0.0
36Kbyte EEPROM IP with configuration 32p32w288bit and oscillator
130GF_EEPROM_07 is a nonvolatile electrically erasable programmable read-only memory with volume 36Kbyte (32(bit per word) x 32(words per page) x 288(...
923
0.0
16x16 Bits OTP (One-Time Programmable) IP, SMI- 0.18μm BCDM 1.8V/5V process
The ATO0016X16SM180BS33NA is organized as 16 bits by 16 one-time programmable (OTP) in 16-bit read and 1-bit program modes. This is a kind of non-vola...
924
0.0
16x8 Bits OTP (One-Time Programmable) IP, TSM- CM018G 0.18μm 1.8V/3.3V Process
The ATO00016X8TS180CMG3NA is organized as 16 bits by 8 one-time programmable (OTP) in 8-bit read and 1-bit program modes. This is a kind of non-volati...
925
0.0
16x8 Bits OTP (One-Time Programmable) IP, VI- 150nm 1.8V BCD Process
The ATO00016X8VI150BG22NA is organized as 16 bits by 8 one-time programmable in 8-bit read and 1-bit program modes. This is a kind of non-volatile m...
926
0.0
16x8 Bits OTP (One-Time Programmable) IP, X-FA- 0.18um XH018 1.8V/3.3V process
The ATO00016X8XH18018P4DA is organized as a 16-bit by 8 one-time programmable (OTP). This is a kind of non-volatile memory fabricated in 0.18µm XH018...
927
0.0
TCAM in SMIC 28HK+ upto 800Mbps
...
928
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm...
929
0.0
Register File with low power retention mode and 3 speed options
Low Leakage. Mobile Semiconductor's SP-ULD-GF22FDX-PLUS memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm F...
930
0.0
Register File with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL Register file memory compiler generates single-port Register File instances using the Bulk 22ULL proce...
931
0.0
memBrain™ Tile
...
932
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k...
933
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 65 nm LP - Non volatile memory optimized for low power - compiler range up to 256 k...
934
0.0
Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 256 k
Foundry Sponsored - Metal programmable ROM compiler - TSMC 130 nm BCD - Non volatile memory optimized for low power - compiler range up to 256 k...
935
0.0
Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k...
936
0.0
Metal programmable ROM compiler - Non volitile memory optimized for low power - compiler range up to 256 k
Metal programmable ROM compiler - TSMC 130 nm BCD Plus - Non volatile memory optimized for low power - compiler range up to 256 k...
937
0.0
Single port SRAM Compiler - low power retention mode and column repair
Single Port SRAM Compiler with Low Power Retention Mode and Ultra Low Leakage...
938
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k
Single Port SRAM compiler - Memory optimized for high density and low power - compiler range up to 320 k...
939
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k
Single Port SRAM compiler - TSMC 55 nm LP - Memory optimized for high density and low power - Deep N Well supported - compiler range up to 320 k...
940
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 uLPeFlash - Memory optimized for high density and low power - Dual Voltage - compiler range up...
941
0.0
Single Port SRAM compiler - Memory optimized for high density and low power - Dual voltage - compiler range up to 640 k
Single Port SRAM compiler - TSMC 90 nm LPeF - Memory optimized for high density and Low power - Dual voltage - compiler range up to 640 k...
942
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and high speed - compiler range up to 320 k
Single Port SRAM compiler - TSMC 65 nm LP - Memory optimized for ultra high density and high speed - compiler range up to 320 k...
943
0.0
Single Port SRAM compiler - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 k
Foundry sponsored - Single Port SRAM compiler - TSMC 55 nm HV - Memory optimized for ultra high density and low power - 3ML- compiler range up to 320 ...
944
0.0
Single Port SRAM compiler - Memory optimized for ultra low power and high density - Dual Voltage - compiler range up to 512 k
Foundry Sponsored - Single Port SRAM compiler - TSMC 180 nm eLL - Memory optimized for ultra low power and high density - Dual Voltage - compiler rang...
945
0.0
Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 22 ULL SRAM memory compiler generates memory instances using the Bulk 22ULL process. Each ultra-low leakage m...
946
0.0
Single Port, High Speed, Multi Bank SRAM Memory Compiler
Low Leakage. Mobile Semiconductor's SP-HSB-GF22FDX-PLUS memory compiler generates high speed memories by splitting memory into 1 to 4 banks for reduc...
947
0.0
1Kbyte EEPROM (NTLab)
The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1Kbyte (16(bit per word) x 8(words per page) x 64(...
948
0.0
2KByte EEPROM in SMIC 130EF
...
949
0.0
1KByte EEPROM IP with configuration 66p16w8bit
130GF_EEPROM_04 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1056 Byte (8(bit per word) x 16(words per pa...
950
0.0
1Kbyte EEPROM with configuration 64p8w16bit
180SMIC_EEPROM_08 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per p...